Submillimeter p-Ge laser using a Voigt-configured permanent magnet, J. Quantum Electronics 32, 1203 (1996).
Pulse separation control for mode-locked far-infrared p-Ge lasers Appl. Phys. Lett. 74, 167 (1999).
Actively mode-locked THz p-Ge hot-hole lasers with electric pulse-separation control and gain control SPIE Vol. 3617, pp181-191 (1999)
Broad band p-Ge optical amplifier of terahertz radiation J. Appl. Phys. 86, 3512 (1999).
Evidence for self-mode-locking in p-Ge laser emission Appl. Phys. Lett. 73, 2037 (1998).
Actively mode-locked p-Ge laser in Faraday configuration Appl. Phys. Lett. 75, 2882 (1999).
Single axial-mode selection in a far-infrared p-Ge laser Appl. Phys. Lett. 76, 1996 (2000).
Piezo controlled intracavity wavelength selector for the far-infrared p-Ge laser Infrared Physics & Technology 42, 107 (2001).
High-resolution study of composite cavity effects for p-Ge laser IEEE J. Quantum Electronics 37,1525 (2001).
Far-IR semiconductor laser for future THz-carrier free-space communications Proc. SPIE 4635, 57 (2002).
Far-infrared p-Ge laser with variable length cavity Infrared Physics & Technology 44, 75 (2003).
High-field p-Ge laser operation in permanent magnet assemply Infrared Physics & Technology 44, 79 (2003).
Dielectric selective mirror for intracavity wavelength slection in far-infrared p-Ge lasers J. Appl. Phys. 94, 5474 (2003).
Intracavity modulation of THz p-Ge laser gain by interband optical excitation Proc. SPIE 5332 (2004).
Intervalence-band THz laser in selectively-doped semiconductor structure Proc. SPIE 5365, 184 (2004).
Neutron transmutation doped far-infrared p-Ge laser J. Appl. Phys., 96, 1 (2004).
High reflectivity intracavity Bragg mirrors for the far-infrared p-Ge laser Proc. SPIE 5411 (2004).
Selectively doped germanium THz laser Proc. SPIE 5411 (2004).
Operation of THz p-Ge laser in a closed cycle refrigerator Proc. SPIE 5411 (2004).
Copper-doped GaAs infrared filter for the 8-13 micron atmospheric window Proc. SPIE 5406 (2004).
Monte Carlo simulation of multilayer delta doped germanium THz laser Proc. Numerical Simulation of Optoelectronic Devices, J Piprek & S Li, eds. (IEEE Lasers and Electro-Optics Society, Piscataway, NJ 2004) pp. 97-98.
Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings Optics & Laser Technology, 37, 87-91 (2005).
Multi-layer silicon cavity mirrors for the far-infrared p-Ge laser Applied Optics 44, 7191 (2005).
Terahertz gain on intersubband transitions in multilayer delta-doped p-Ge structures J. Appl. Phys. 98, 023107 (2005).
Laser doping of germanium in Laser Applications in Microelectronics and Optoelectronic Manufacturing X, edited by J. Fieret, P. R. Herman, T. Okado, and C. B. Arnold, Proc. SPIE 5713, 67 (2005).
Amplification of terahertz radiation in delta-doped germanium thin films in Terahertz and Gigahertz Electronics and Photonics IV, edited by R. J. Hwu and K. J. Linden, Proc. SPIE 5727, 44 (2005).
Gain comparison for periodically delta-doped p-Ge structures with vertical and in-plane transport Proc. SPIE 5790, 161 (2005).
Terahertz gain in multilayer delta-doped p-Ge films
Optical Terahertz Science and Technology OSA Topical Meeting (2005).
Compact tunable p-Ge laser
Optical Terahertz Science and Technology OSA Topical Meeting (2005).
Inter-valence-band hole-hole scattering in cubic semiconductors Phys. Rev. B 73, 075327 (2006).
Terahertz amplification in delta-doped germanium films with in plane transport J. Appl.
Phys. 99, 093106 (2006).
Toward hot-hole THz lasers in homoepitaxial Si and GaAs with layered doping
Proc. SPIE 5931, 310 (2006).
Terahertz gain on inter-valence-band transitions in multilayer delta-doped p-GaAs structures
Proc. SPIE 6212, 621206-1 (2006).
Anisotropic optical phonon scattering of holes in cubic semiconductors J. Appl.
Phys. 101, 113716 (2007).
Inter-valence-band hot hole laser in two-dimensional delta-doped homoepitaxial semiconductor
structures invited article, J. Nanoelectronics & Optoelectronics 2, 51-57 (2007).
High-power far-IR p-Ge laser with injection seeding
Proc. Infrared Technology and Applications 9, Edited by Marija Strojnik,
Oct. 8-12, 2007, Leon, Mexico, invited.
Injection-seeded internal-reflection-mode p-Ge laser exceeds
10 W peak terahertz power, J. Appl. Phys. 103, 083112 (2008).
pGe laser
principles.
Mode-locking principles
Mode locking achieved at UCF on 2/5/98
Pulse separation modulation
Magnetic Field
High-voltage pulser
Cryostat
Output coupler
Ge single crystals
UHF gain modulation
Time-domain detection
Spectroscopy